sangdest microelectronics technical data green products data sheet n0836, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn mbr f10100 MBRF10100 schottky rectifier applications: switching power supply converters free-wheeling diodes reverse battery protection center tap configuration features: 150 c t j operation center tap configuration low forward voltage drop high purity, high temperature epoxy encapsulation f or enhanced mechanical strength and moisture resistance high frequency operation guard ring for enhanced ruggedness and long term re liability this is a pb ? free device all smc parts are traceable to the wafer lot additional testing can be offered upon request mechanical dimensions: in mm ito-220ac(hd) symbol min. typ. max. a 4.30 4.50 4 .70 a1 1.10 1.30 1.50 a2 2.80 3.00 3.20 a3 2.50 2.70 2.90 b 0.50 0.60 0.75 b1 1.10 1.20 1.35 b2 1.50 1.60 1.75 c 0.55 0.60 0.75 d 14.80 15.00 15.20 e 9.96 10.16 10.36 e - 2.55 - e1 - 5.10 - h1 6.50 6.70 6.90 l 12.70 13.20 13.70 l1 1.60 1.80 2 .00 l2 0.80 1.00 1.20 l3 0.60 0.80 1.00 l4 - 1.10 1.50 p1( ? ) 3.30 3.50 3.70 p2( ? ) 2.99 3.19 3.39 q 2.50 2.70 2.90 1 5 2 4 3 10 4 5 5 5
sangdest microelectronics technical data green products data sheet n0836, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn mbr f10100 marking diagram: where xxxxx is yywwl mbr = device type f = package type 10 = forward current (10a) 100 = reverse voltage (100v) ssg = ssg yy = year ww = week l = lot number cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping MBRF10100 ito-220ac (pb-free) 50pcs / tube for information on tape and reel specifications, in cluding part orientation and tape sizes, please ref er to our tape and reel packaging specification. maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 100 v max. average forward current i f(av) 50% duty cycle @t c = 133c, rectangular wave form 10 a max. peak one cycle non-repetitive surge current (per leg) i fsm 8.3 ms, half sine pulse 150 a
sangdest microelectronics technical data green products data sheet n0836, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn mbr f10100 electrical characteristics: characteristics symbol condition max. units v f1 @ 10a, pulse, t j = 25 c 0.85 v max. forward voltage drop (per leg)* v f2 @ 10 a, pulse, t j = 125 c 0.70 v max. reverse current (per leg)* i r1 @v r = rated v r t j = 25 c 1.0 ma i r2 @v r = rated v r t j = 125 c 6 ma typical series inductance (per leg) l s measured lead to lead 5 mm from package body 8.0 nh max. voltage rate of change dv/dt - 10,000 v/ m s clip mounting, the epoxy body away from the heatsink edge by more than 0.110" along the lead direction. 4500 clip mounting, the epoxy body is inside the heatsink. 3500 rsm isolation voltage ( t = 1.0 second, r. h. < =30%, t a = 25 c) v iso screw mounting, the epoxy body is inside the heatsink. 1500 v * pulse width < 300s, duty cycle <2% thermal-mechanical specifications: characteristics symbol condition specification units max. junction temperature t j - -55 to +150 c max. storage temperature t stg - -55 to +150 c maximum thermal resistance junction to case r q jc dc operation 3.5 c/w approximate weight wt - 1.6 g case style ito-220ac
sangdest microelectronics technical data green products data sheet n0836, rev. a weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 fax (86) 25-87123900 world wide web site - http://www.sangdest.com.cn e-mail address - sales@ sangdest.com.cn mbr f10100 disclaimer: 1- the information given herein, including the spec ifications and dimensions, is subject to change wit hout prior notice to improve product characteristics. before ordering, purchasers are ad vised to contact the smc - sangdest microelectronic s (nanjing) co., ltd sales department for the latest version of the datasheet( s). 2- in cases where extremely high reliability is req uired (such as use in nuclear power control, aerosp ace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices th at feature assured safety or by means of users fail-safe precautions or other arra ngement . 3- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any damages that may result from an accident or any other cause during operation of the users units ac cording to the datasheet(s). smc - sangdest microel ectronics (nanjing) co., ltd assumes no responsibility for any intellectual prop erty claims or any other problems that may result f rom applications of information, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronic s (nanjing) co., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exce eding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or s mc - sangdest microelectronics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplic ated, in any form, in whole or part, without the ex pressed written permission of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the dat asheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safet y nor are they to be applied to that purpose by the ir direct purchasers or any third party. when exporting these products (technologies) , the necessary procedures are to be taken in accor dance with related laws and regulations..
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